The TP70H240G4ZS 700V, 240mΩ, Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV SuperGaN® platform. It integrates high-voltage GaN High Electron Mobility Transistor (HEMT) and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Renesas GaN provides higher efficiency than silicon by reducing gate charge, crossover loss, and reverse recovery charge. The TP70H240G4ZS is available in a DPAK (TO-252) package with a common-source configuration.