650 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability The GS-065-150-1-D2 is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-150-1-D2 is a high performing GaN die designed for use in power modules for high power applications such as on-board and off-board EV chargers, traction drive, industrial power supplies and renewable energy systems. Please contact us for more information here.