ISG0616N10NM5HSC is a half-bridge dual N-channel MOSFET with 4.0 mΩ RDS(on) for drives and telecom Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.