OptiMOS™ 5 MOSFET 30V in PQFN 3.3x3.3 Source-Down DSC The IQE008N03LM5SC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside the components. It offers increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than the overmolded package, and is available in Standard and Center-Gate footprints.