120 V boot 3 A high and low side junction isolated gate drivers The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage and provides full 3 A current capability. The high-side bias voltage is generated using a bootstrap technique using an integrated bootstrap diode. Independent inputs allow controlling high- and low-side domains independently.