The IGI60L5050A1M combines a half-bridge power stage consisting of two GaN HEMTs with level shifters in a small 6 x 8 mm PG-TFLGA-27-2 package. The device uses the Infineon CoolGaN™ GIT which offers the highest Figure-of-Merit (FOM) and robustness. The internal bootstrap diode means that with minimal external components, designers can achieve full control to tune the rise/fall times while maintaining a simple system BOM. This is ideally suited to support the design of compact appliances in the low power applications.