OptiMOS™ power MOSFETs 40 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on) The power MOSFET IQDH45N04LM6CG 40 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(ON) of 0.45 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like battery-powered tools , SMPS , telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.