IRHMS9A3264 is a rad hard R9 N-channel MOSFET with improved immunity to SEE and electrical performance up to 300krad(Si) TID. Its low RDS(on) and fast switching times increase power density and reduce power losses in high-speed switching applications in space satellite bus and payload power systems. Coming in a TO-254AA Low Ohmic package, established advantages include voltage control, fast switching, and electrical parameter stability.