R9 technology is the basis for this rad hard 250V, 82A N-channel MOSFET for space applications with improved SEE immunity and electrical performance up to 300krad(Si) TID. The IRHNS9A3264's low RDS(on) and fast switching times increase power density and reduce power losses in high-speed switching applications. In a SupIR-SMD package, it retains proven MOSFET advantages like voltage control, fast switching, and electrical parameter stability.