Rad hard high voltage, high speed power MOSFET and IGBT driver RIC7S113L4SCB has independent high and low side referenced output channels. Designed for harsh radiation environments such as space, its electrical parameters are characterized up to 100 krad(Si) TID and LET of 81.9 MeV·cm2/mg. MIL-PRF-38535 Level B screening in a MO-036AB CIC package.