RIC7S113L4 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Designed for harsh radiation environments such as space, this high- and low-side driver is SEE characterized up to LET of 81.9 MeV·cm2/mg and its electrical parameters specified pre and post-irradiation up to 100 krad(Si) TID. This is a COTS device in a MO-036AB CIC package.