Rad hard high voltage, high speed power MOSFET and IGBT driver RIC7S113E4SCS has independent high and low side referenced output channels. Intended for harsh radiation environments such as space, its electrical parameters are specified pre and post-irradiation up to 100 krad(Si) and SEE characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg. Screened per MIL-PRF-38535 Level S and in LCC CIC hermetic packaging.