RIC7S113E4SCB is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Packaged in a LCC CIC, it is intended for harsh radiation environments such as space, with electrical parameters specified up to 100 krad(Si) and single effect effects (SEE) characterized up to LET of 81.9 MeV·cm2/mg. This device is screened per MIL-PRF-38535 Level B.