JANSR2N7616UBN MOSFET is a single N-channel device with a 60V/0.8A rating and a UB package. It offers radiation hardness up to 100krad(Si) TID and QPL classification, with single event gate rupture and burnout immunity. This R7 MOSFET is ideal for interfacing with CMOS and TTL control circuits in radiation environments, and can be used to increase output current from a 3.3-5V source.