The JANSF2N7648T3 R9 N-channel MOSFET is a radiation-hardened device with a 100V and 30A rating, ideal for space applications. Its low RDS(on) and faster switching times increase power density and reduce power losses in high-speed switching applications. Electrical performance up to 300krad(Si) TID classification. The MOSFET advantages of voltage control, fast switching, ease of paralleling and temperature stability are retained.