The IRHYS9A7234CM R9 N-channel MOSFET is a rad hard device suitable for space applications with improved immunity to Single Event Effects (SEE). The device has a maximum voltage of 250V and can handle a current of up to 17A. With low RDS(on) and faster switching times, it reduces power losses and increases power density in high-speed switching applications. Its electrical performance can withstand Linear Energy Transfer (LET) up to 90MeV·cm2/mg.