The IRHYS67230CSCS R6 N-channel MOSFET is rad hard with 200V and 16A capacity. In a TO-257AA low ohmic package, it is designed for space applications. With improved immunity to Single Event Effect, it offers very low RDS(on) and faster switching times, increasing power density for DC-DC converters and motor controllers. Electrical performance is characterized up to 100krad(Si) TID.