The IRHYB67134CM R6 N-channel MOSFET is a single radiation hardened device with a maximum voltage of 150V and a maximum current of 19A. This COTS device offers electrical performance of up to 100krad(Si) TID. Housed in a TO-257AA tabless low ohmic package, this rad hard MOSFET is ideal for space and radiation-sensitive applications. Its low RDS(on) and low gate charge ensure high efficiency in switching applications.