The IRHY67C30CSCS R6 N-channel MOSFET is a rad-hard device with 600V and 3.4A capabilities. Its superior power technology provides improved power density and faster switching times for high speed switching applications. With low RDS(on) and high immunity to SEE, this QIRL device is ideal for space applications. It's characterized for LET up to 90MeV·cm2/mg and electrical performance up to 100krad(Si) TID.