The IR HiRel R6 N-channel MOSFET is a rad-hard device with 600V and 3.4A capabilities. Its superior power technology provides improved power density and faster switching times for high speed switching applications. With low RDS(on) and high immunity to SEE, it's ideal for space applications. It's characterized for useful performance with LET up to 90MeV·cm2/mg and has electrical performance up to 100krad(Si) TID, QIRL classification.