The IRHY67C30C R5 P-channel MOSFET is rad hard with a -200V and -8A capacity. Housed in a TO-257AA package, the electrical performance is up to 100krad(Si) TID, with QIRL classification. The device has low RDS(on) and gate charge for reduced power losses in switching applications, retaining MOSFET advantages such as voltage control, fast switching, and temperature stability.