The IRHNS9A3064SCS R9 N-channel MOSFET is a radiation-hard, 60V, 100A device. In a SupIR-SMD package, it provides electrical performance up to 300krad(Si) TID and is QIRL space-grade. With low RDS(on) and faster switching times, it is ideal for high-speed switching applications, such as DC-DC converters and motor controllers. Its superior immunity to Single Event Effects (SEE) and LET up to 90MeV·cm2/mg makes it perfect for space applications.