IRHNS57260SESCS R5 N-channel MOSFET is a rad hard device with 200V and 53A capability, ideal for space applications. It has high electrical performance up to 100krad(Si) TID, QIRL classification with low RDS(on) and low gate charge, resulting in reduced power losses. Housed in a SupIR-SMD package, this MOSFET has fast switching, voltage control, and temperature stability of electrical parameters.