The rad hard N-channel MOSFET IRHNJC9A3130 is a single device with 100V, 22A capabilities, packaged in R9 SMD-0.5 (ceramic lid) and rated for up to 300krad(Si) TID. Its low RDS(on) and faster switching times reduce power losses, increase power density and provide improved immunity to Single Event Effects (SEE) in high-speed switching applications. A COTS part, R9 MOSFETs are ideal for space applications.