IRHNJ67134B R6 N-channel MOSFET is a single, 150V, 19A device in a SMD-0.5 package. Radiation-hardened, it has electrical performance up to 100krad(Si) TID with improved immunity to Single Event Effect. Its low RDS(on) and faster switching times make it ideal for high speed switching applications, including DC-DC converters and motor controllers.