The IRHNA6S7160SCS R6 N-channel MOSFET is a 100V, 56A, radiation-hardened device in a SMD-2 package. With electrical performance up to 100krad(Si) TID and LET of 90 MeV·cm2/mg, it is designed for space applications. Low RDS(on) and gate charge reduce power losses in DC-DC converters and motor controllers. Voltage control, fast switching, and temperature stability make this MOSFET ideal in high-reliability applications.