The rad hard IRHNA67264 R6 N-channel MOSFET offers 200V and 31.5A with electrical performance up to 100krad(Si) TID. A COTS part in a compact SMD-2 package, it's optimized for space applications with low RDS(on), low gate charge, loss reduction, and well-established MOSFET advantages. LET up to 90 MeV·cm2/mg and characterized for Total Dose and SEE.