The IRHNA57260SE N-channel MOSFET is a radiation-hardened device with a 200V, 35A rating. The R5 device features low RDS(on) and gate charge, which deliver high power efficiency for DC-DC converters and motor control. The COTS device is designed for space applications, with Total Dose and Single Event Effects characterization. The SMD-2 package features lead form down, and electrical performance is up to 100krad(Si) TID.