The IRHNA57160 R5 N-channel MOSFET is a radiation-hardened device with a 100V, 69A rating. Its low RDS(on) and gate charge deliver high power efficiency for DC-DC converters and motor control. The COTS device is designed for space applications, with proven Total Dose and Single Event Effects characterization. The SMD-2 package features lead form down, and electrical performance is up to 100krad(Si) TID.