The IRHN57250SESCS R5 N-channel MOSFET is a 200V, 31A rad hard device for space applications. Featuring low RDS(on) and a low gate charge, it reduces power losses and maintains established MOSFET benefits such as voltage control, fast switching, and temperature stability. Characterized for SEE up to LET 80 MeV·cm2/mg with a QIRL classification, it is available in a SMD-1 package.