The IRHN57250SE N-channel MOSFET is a rad hard device with 200V and 31A capabilities, featuring low RDS(on), low gate charge, and established MOSFET benefits. This COTS MOSFET is ideal for space applications and characterized for SEE with useful performance up to LET 80 MeV·cm2/mg. The device reduces power losses in DC-DC converters and motor control applications.