IRHMS6S7264 R6 N-channel MOSFET is a high-performance, rad hard MOSFET for space applications. It features 250V, 45A, and low RDS(on) and gate charge, reducing power losses in switching applications. This COTS device retains all the advantages of MOSFETs, including voltage control, fast switching, and temperature stability. It's characterized for Total Dose and Single Event Effect up to LET of 90 MeV·cm2/mg.