IRHMS67264 R6 N-channel MOSFET is a rad hard device in a TO-254AA low ohmic package with electrical performance up to 100krad(Si) TID. It has improved immunity to Single Event Effects (SEE) and LET up to 85 MeV·cm2/mg. With low RDS(on) and fast switching times, it is suitable for space applications such as DC-DC converters or motor drives. The device's MOSFET advantages include voltage control and temperature stability of electrical parameters.