The IRHMS67260SCV R6 N-channel MOSFET is designed for space applications, with a maximum voltage of 200V and maximum current of 45A. Its radiation-hardened technology allows for electrical performance up to 100krad(Si) TID, and it has been characterized for both Total Dose and Single Event Effects (SEE) with useful performance up to LET of 90 MeV·cm2/mg. The MOSFET's low RDS(on) and low gate charge make it ideal for DC-DC converters.