IRHMS67260SCS R6 N-channel MOSFET is a radiation-hardened MOSFET with a max voltage of 200V and max current of 45A. Its low RDS(on) and low gate charge make it perfect for switching applications. This MOSFET is ideal for space applications and has been characterized for both Total Dose and Single Event Effects (SEE) with useful performance up to LET of 90 MeV·cm2/mg.