IRHLUB770Z4SCS R7 N-channel MOSFET is a radiation-hard solution for power devices in space and other environments. With a rating of 60V and 0.8A, it maintains single event gate rupture and burnout immunity while interfacing easily with most logic gates, micro-controllers, and other device types. This single N-channel MOSFET is available in a UB package and offers electrical performance up to 100krad(Si) TID, with a QIRL classification.