IRHLUB770Z4 R7 MOSFET is a single N-channel device with a 60V, 0.8A rating. It is rad hard and UB packaged, with electrical performance up to 100krad(Si) TID. With single event gate rupture and burnout immunity, it is ideal for radiation environments and interfacing with most logic gates, linear ICs, and micro-controllers operating between 3.3-5V. A reliable solution for powering devices in space.