IRHF7130 in R4 technology offers a high-performance, rad hard N-channel MOSFET in a TO-205AF package. With a 200V voltage rating and 3.5V gate threshold, this device is ideal for space applications, featuring low RDS(on) and gate charge for reduced power losses during switching. Its electrical performance is characterized up to 100krad(Si) TID and up to LET of 90MeV·cm2/mg, while retaining the advantages of MOSFETs.