IRHF6S7230SCS R6 N-channel MOSFET is a radiation-hardened device designed for space applications. With a maximum voltage rating of 200V and a current rating of 9.1A, it features low RDS(on) and low gate charge for reduced power losses in switching applications. Its electrical performance is up to 100krad(Si) TID, QIRL classified, making it a reliable choice for demanding space environments.