IRHF6S7230 R6 N-channel MOSFET is a radiation-hardened device with a 200V and 9.1A rating, suitable for space applications. With a TO-205AF package and COTS classification, it offers electrical performance up to 100krad(Si) TID, making it ideal for DC-DC converters and motor controllers. The low RDS(on) and gate charge enable low power losses. LET of 90 MeV·cm2/mg allows for useful performance in harsh environments.