StrongIRFET™ 2 single N-channel power MOSFET 100 V in DPAK Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.