CoolSiC™ 1200 V, 20 mΩ SiC Trench MOSFET in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 20 mΩ G1 in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.