600 V CoolGaN™ e-mode power transistor for high power applications in bottom side cooled power package The IGT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 package, it is designed optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications.