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  <title>[elecena] IGLD60R190D1S - zmiany ceny</title>
  <description>CoolGaN™ 600 V enhancement mode power transistor with fast turn-on and turn-off speed and minimum switching losses

The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation.
It is certified through an extensive GaN-specific qualification process, exceeding industry standards.
Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-C adapters and chargers.</description>
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