Gallium nitride CoolGaN™ 600V e-mode power transistor IGT60R190D1 for ultimate efficiency and reliability The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications.