S80KS5122GABHB023 is a 512 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HyperBus™ interface, 8-bit DQ and RWDS strobe, using DDR transfers up to 200 MHz (400 MBps) with 35 ns max tACC. It operates from 1.7 V to 2.0 V across -40 to 105°C (AEC-Q100 Grade 2). Linear or wrapped bursts (16 to 128 bytes), partial/full refresh, hybrid sleep and deep power-down are supported in a 24-ball FBGA.