The S80KS5122GABHB020 is a 512 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HYPERBUS™ DDR interface (8-bit DQ plus RWDS, CS# and RESET#). It supports clocks up to 200 MHz for up to 400 MBps throughput and 35 ns max access time, with configurable linear or wrapped bursts (16 to 128 bytes). It operates from 1.7 V to 2.0 V VCC in a 24-ball FBGA package. AEC-Q100 Grade 2 (B), -40 to 105°C.