S80KS5122GABHA023 is a 512 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HYPERBUS™ interface (8-bit DQ plus RWDS) for fast external memory in embedded and automotive systems. It supports 200 MHz DDR transfers for up to 400 MBps throughput and 35 ns maximum access time. This AEC-Q100 Grade 3 (–40 to 85°C) device is offered in a 24-ball FBGA and includes hybrid sleep and deep power-down.