S80KS2562GABHV023 is a 256 Mb HYPERRAM self-refresh DRAM with a 1.8 V HYPERBUS DDR interface for high-bandwidth, low-pin-count memory expansion. It supports up to 200 MHz clock and 400 MBps throughput with 35 ns maximum access time. Configurable linear, wrapped (16/32/64/128 B), or hybrid bursts and deep power down to 15 b5A help optimize performance and standby power in embedded systems.