S80KS2562GABHB020 is a 256 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HYPERBUS™ interface for high-bandwidth external memory expansion. It supports DDR transfers up to a 200 MHz clock for up to 400 MBps throughput and 35 ns max access time, with configurable linear and wrapped bursts from 16 to 128 bytes. The AEC-Q100 Grade 2 option operates from 1.7 V to 2.0 V across -40 to 105°C and is offered in a 24-ball FBGA package.